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To deposit a thin film of transition metal oxide, the PLD (Pulse Laser Deposition) method is often used. In this method, a pulsed UV laser beam is focused on a target raw material, instantly breaking down and vaporizing it, and depositing the material on a substrate. In contrast, to grow an oxide epitaxially on a substrate, the substrate must be heated to a high temperature in a high oxygen pressure. Fig. shows the concept of the PLD method, while Photo2 shows an example in which the infrared guide heating system (at the top of the photo) has been installed for heating a substrate.
√ Ultimate Pressure: 5×10-9 Pa
√ Max. temperature: 1,200°C - 1,400°C
Schematic drawing of the system
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